Please use this identifier to cite or link to this item:
https://doi.org/10.1103/PhysRevApplied.15.024063
| DC Field | Value | |
|---|---|---|
| dc.title | Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory | |
| dc.contributor.author | Rahul Mishra | |
| dc.contributor.author | Taehwan Kim | |
| dc.contributor.author | Jongsun Park | |
| dc.contributor.author | Hyunsoo Yang | |
| dc.date.accessioned | 2024-07-16T00:24:42Z | |
| dc.date.available | 2024-07-16T00:24:42Z | |
| dc.date.issued | 2021-02-25 | |
| dc.identifier.citation | Rahul Mishra, Taehwan Kim, Jongsun Park, Hyunsoo Yang (2021-02-25). Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory. Physical Review Applied 15 (2). ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevApplied.15.024063 | |
| dc.identifier.issn | 2331-7019 | |
| dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/249144 | |
| dc.rights | CC0 1.0 Universal | |
| dc.rights.uri | http://creativecommons.org/publicdomain/zero/1.0/ | |
| dc.type | Article | |
| dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
| dc.description.doi | 10.1103/PhysRevApplied.15.024063 | |
| dc.description.sourcetitle | Physical Review Applied | |
| dc.description.volume | 15 | |
| dc.description.issue | 2 | |
| dc.published.state | Published | |
| Appears in Collections: | Staff Publications Elements | |
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| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| Multi-bit PRA_1Feb2021_allAccepted.pdf | 722.54 kB | Adobe PDF | OPEN | Post-print | View/Download |
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