Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICEE56203.2022.10117644
Title: Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits: Invited Paper
Authors: Das, D 
Cen, Y 
Wang, J
Fong, X 
Issue Date: 1-Jan-2022
Publisher: IEEE
Citation: Das, D, Cen, Y, Wang, J, Fong, X (2022-01-01). Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits: Invited Paper. 2022 IEEE International Conference on Emerging Electronics (ICEE). ScholarBank@NUS Repository. https://doi.org/10.1109/ICEE56203.2022.10117644
Abstract: Topologically stable magnetic skyrmion has a much lower depinning current density that may be useful for memory as well as neuromorphic computing. However, skyrmion-based devices suffer from the Magnus force originating from the skyrmion Hall effect, which may result in unwanted skyrmion annihilation if the magnitude of the driving current gets too large. A design of an artificial neuron and a synapse using a synthetic antiferromagnetically coupled bilayer device, which nullifies the Magnus force, is demonstrated in this work. The leak term in the artificial leaky integrate-and-fire neuron is achieved by engineering the uniaxial anisotropy profile of the neuronal device. The synaptic device has a similar structure as the neuronal device but has a constant uniaxial anisotropy. The synaptic device also has a linear and symmetric weight update, which is a highly desirable trait of an artificial synapse. Neuronal and synaptic devices based on magnetic domain-wall (DW) motion are also studied and compared to skyrmionic devices. Our simulation results show the energy required to perform such operation in DW or skyrmion-based devices is on the order of a few fJ.
Source Title: 2022 IEEE International Conference on Emerging Electronics (ICEE)
URI: https://scholarbank.nus.edu.sg/handle/10635/245761
ISBN: 9781665491853
DOI: 10.1109/ICEE56203.2022.10117644
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