Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICEE56203.2022.10117644
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dc.titleDesign of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits: Invited Paper
dc.contributor.authorDas, D
dc.contributor.authorCen, Y
dc.contributor.authorWang, J
dc.contributor.authorFong, X
dc.date.accessioned2023-11-06T08:14:25Z
dc.date.available2023-11-06T08:14:25Z
dc.date.issued2022-01-01
dc.identifier.citationDas, D, Cen, Y, Wang, J, Fong, X (2022-01-01). Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits: Invited Paper. 2022 IEEE International Conference on Emerging Electronics (ICEE). ScholarBank@NUS Repository. https://doi.org/10.1109/ICEE56203.2022.10117644
dc.identifier.isbn9781665491853
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/245761
dc.description.abstractTopologically stable magnetic skyrmion has a much lower depinning current density that may be useful for memory as well as neuromorphic computing. However, skyrmion-based devices suffer from the Magnus force originating from the skyrmion Hall effect, which may result in unwanted skyrmion annihilation if the magnitude of the driving current gets too large. A design of an artificial neuron and a synapse using a synthetic antiferromagnetically coupled bilayer device, which nullifies the Magnus force, is demonstrated in this work. The leak term in the artificial leaky integrate-and-fire neuron is achieved by engineering the uniaxial anisotropy profile of the neuronal device. The synaptic device has a similar structure as the neuronal device but has a constant uniaxial anisotropy. The synaptic device also has a linear and symmetric weight update, which is a highly desirable trait of an artificial synapse. Neuronal and synaptic devices based on magnetic domain-wall (DW) motion are also studied and compared to skyrmionic devices. Our simulation results show the energy required to perform such operation in DW or skyrmion-based devices is on the order of a few fJ.
dc.publisherIEEE
dc.sourceElements
dc.typeConference Paper
dc.date.updated2023-11-05T09:01:29Z
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1109/ICEE56203.2022.10117644
dc.description.sourcetitle2022 IEEE International Conference on Emerging Electronics (ICEE)
dc.published.statePublished
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