Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41699-020-00190-0
Title: Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
Authors: Sifan Li, Bochang Li 
FENG XUEWEI 
Li Chen
LI YESHENG 
Li Huang
Fong Xuanyao 
Kah-Wee Ang
Issue Date: 12-Jan-2021
Publisher: Nature
Citation: Sifan Li, Bochang Li, FENG XUEWEI, Li Chen, LI YESHENG, Li Huang, Fong Xuanyao, Kah-Wee Ang (2021-01-12). Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing. npj 2D Materials and Applications 5 : 1. ScholarBank@NUS Repository. https://doi.org/10.1038/s41699-020-00190-0
Rights: Attribution-NoDerivatives 4.0 International
Abstract: State-of-the-art memristors are mostly formed by vertical metal-insulator-metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors are difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron beam irradiated rhenium disulfide (ReS2) is realized, which unveil a unique resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.
Source Title: npj 2D Materials and Applications
URI: https://scholarbank.nus.edu.sg/handle/10635/225296
DOI: 10.1038/s41699-020-00190-0
Rights: Attribution-NoDerivatives 4.0 International
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