Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41598-019-45392-9
Title: Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric
Authors: Lau, C.S.
Chee, J.Y.
Thian, D.
Kawai, H.
Deng, J.
Wong, S.L. 
Ooi, Z.E.
Lim, Y.-F.
Goh, K.E.J. 
Issue Date: 2019
Publisher: Nature Publishing Group
Citation: Lau, C.S., Chee, J.Y., Thian, D., Kawai, H., Deng, J., Wong, S.L., Ooi, Z.E., Lim, Y.-F., Goh, K.E.J. (2019). Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric. Scientific Reports 9 (1) : 8769. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-019-45392-9
Rights: Attribution 4.0 International
Abstract: We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics. © 2019, The Author(s).
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/209513
ISSN: 2045-2322
DOI: 10.1038/s41598-019-45392-9
Rights: Attribution 4.0 International
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