Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41598-019-45392-9
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dc.titleCarrier control in 2D transition metal dichalcogenides with Al2O3 dielectric
dc.contributor.authorLau, C.S.
dc.contributor.authorChee, J.Y.
dc.contributor.authorThian, D.
dc.contributor.authorKawai, H.
dc.contributor.authorDeng, J.
dc.contributor.authorWong, S.L.
dc.contributor.authorOoi, Z.E.
dc.contributor.authorLim, Y.-F.
dc.contributor.authorGoh, K.E.J.
dc.date.accessioned2021-12-06T04:20:03Z
dc.date.available2021-12-06T04:20:03Z
dc.date.issued2019
dc.identifier.citationLau, C.S., Chee, J.Y., Thian, D., Kawai, H., Deng, J., Wong, S.L., Ooi, Z.E., Lim, Y.-F., Goh, K.E.J. (2019). Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric. Scientific Reports 9 (1) : 8769. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-019-45392-9
dc.identifier.issn2045-2322
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/209513
dc.description.abstractWe report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics. © 2019, The Author(s).
dc.publisherNature Publishing Group
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceScopus OA2019
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1038/s41598-019-45392-9
dc.description.sourcetitleScientific Reports
dc.description.volume9
dc.description.issue1
dc.description.page8769
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