Please use this identifier to cite or link to this item: https://doi.org/10.1088/1742-6596/1124/8/081036
Title: Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices
Authors: Shandyba, N.A.
Panchenko, I.V.
Tominov, R.V.
Smirnov, V.A.
Pelipenko, M.I.
Zamburg, E.G. 
Chu, Y.H.
Issue Date: 2018
Publisher: Institute of Physics Publishing
Citation: Shandyba, N.A., Panchenko, I.V., Tominov, R.V., Smirnov, V.A., Pelipenko, M.I., Zamburg, E.G., Chu, Y.H. (2018). Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices. Journal of Physics: Conference Series 1124 : 81036. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/1124/8/081036
Rights: Attribution 3.0 Unported
Abstract: Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 M? to 700.32±300.83 M? and low-resistance state (LRS) from 0.03±0.02 M? to 0.09±0.03 M?, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing. © 2018 Institute of Physics Publishing. All rights reserved.
Source Title: Journal of Physics: Conference Series
URI: https://scholarbank.nus.edu.sg/handle/10635/206491
ISSN: 1742-6588
DOI: 10.1088/1742-6596/1124/8/081036
Rights: Attribution 3.0 Unported
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