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| Title: | Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices | Authors: | Shandyba, N.A. Panchenko, I.V. Tominov, R.V. Smirnov, V.A. Pelipenko, M.I. Zamburg, E.G. Chu, Y.H. |
Issue Date: | 2018 | Publisher: | Institute of Physics Publishing | Citation: | Shandyba, N.A., Panchenko, I.V., Tominov, R.V., Smirnov, V.A., Pelipenko, M.I., Zamburg, E.G., Chu, Y.H. (2018). Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices. Journal of Physics: Conference Series 1124 : 81036. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/1124/8/081036 | Rights: | Attribution 3.0 Unported | Abstract: | Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 M? to 700.32±300.83 M? and low-resistance state (LRS) from 0.03±0.02 M? to 0.09±0.03 M?, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing. © 2018 Institute of Physics Publishing. All rights reserved. | Source Title: | Journal of Physics: Conference Series | URI: | https://scholarbank.nus.edu.sg/handle/10635/206491 | ISSN: | 1742-6588 | DOI: | 10.1088/1742-6596/1124/8/081036 | Rights: | Attribution 3.0 Unported |
| Appears in Collections: | Staff Publications Elements |
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