Please use this identifier to cite or link to this item: https://doi.org/10.1088/1742-6596/1124/8/081036
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dc.titleSize effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices
dc.contributor.authorShandyba, N.A.
dc.contributor.authorPanchenko, I.V.
dc.contributor.authorTominov, R.V.
dc.contributor.authorSmirnov, V.A.
dc.contributor.authorPelipenko, M.I.
dc.contributor.authorZamburg, E.G.
dc.contributor.authorChu, Y.H.
dc.date.accessioned2021-11-16T09:30:51Z
dc.date.available2021-11-16T09:30:51Z
dc.date.issued2018
dc.identifier.citationShandyba, N.A., Panchenko, I.V., Tominov, R.V., Smirnov, V.A., Pelipenko, M.I., Zamburg, E.G., Chu, Y.H. (2018). Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices. Journal of Physics: Conference Series 1124 : 81036. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/1124/8/081036
dc.identifier.issn1742-6588
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/206491
dc.description.abstractSize effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 M? to 700.32±300.83 M? and low-resistance state (LRS) from 0.03±0.02 M? to 0.09±0.03 M?, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing. © 2018 Institute of Physics Publishing. All rights reserved.
dc.publisherInstitute of Physics Publishing
dc.rightsAttribution 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.sourceScopus OA2018
dc.typeConference Paper
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1088/1742-6596/1124/8/081036
dc.description.sourcetitleJournal of Physics: Conference Series
dc.description.volume1124
dc.description.page81036
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