Please use this identifier to cite or link to this item: https://doi.org/10.1038/nmat5009
Title: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics
Authors: Sreetosh Goswami 
Adam J. Matula
Santi P. Rath
Svante Hedström
Surajit Saha 
Meenakshi Annamalai 
Debabrata Sengupta
Abhijeet Patra 
Siddhartha Ghosh 
Hariom Jani 
Soumya Sarkar 
Mallikarjuna Rao Motapothula 
Christian A. Nijhuis 
Jens Martin 
Sreebrata Goswami 
Victor S. Batista
T. Venkatesan 
Keywords: Electronic devices
Issue Date: 23-Oct-2017
Publisher: Nature Research
Citation: Sreetosh Goswami, Adam J. Matula, Santi P. Rath, Svante Hedström, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A. Nijhuis, Jens Martin, Sreebrata Goswami, Victor S. Batista, T. Venkatesan (2017-10-23). Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nature Materials 16 : 1216 - 1224. ScholarBank@NUS Repository. https://doi.org/10.1038/nmat5009
Abstract: Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (∼350 devices), fast switching (≤30 ns), excellent endurance (∼1012 cycles), stability (>106 s) and scalability (down to ∼60 nm2). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.
Source Title: Nature Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/189223
ISSN: 14764660
DOI: 10.1038/nmat5009
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