Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep15463
Title: Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
Authors: Yao, L.-Z 
Crisostomo, C.P
Yeh, C.-C
Lai, S.-M
Huang, Z.-Q
Hsu, C.-H
Chuang, F.-C
Lin, H 
Bansil, A 
Issue Date: 2015
Citation: Yao, L.-Z, Crisostomo, C.P, Yeh, C.-C, Lai, S.-M, Huang, Z.-Q, Hsu, C.-H, Chuang, F.-C, Lin, H, Bansil, A (2015). Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate. Scientific Reports 5 : 15463. ScholarBank@NUS Repository. https://doi.org/10.1038/srep15463
Rights: Attribution 4.0 International
Abstract: We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates. © 2015 Macmillan Publishers Limited.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/180312
ISSN: 20452322
DOI: 10.1038/srep15463
Rights: Attribution 4.0 International
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