Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4893962
Title: | Wet chemical thinning of molybdenum disulfide down to its monolayer | Authors: | Amara, K.K Chu, L Kumar, R Toh, M Eda, G |
Keywords: | Layered semiconductors Molybdenum oxide Nitric acid Sulfur compounds Atomically thin crystals Bilayer sheets Chemical etching Concentrated nitric acid Electronic quality Layer compounds Molybdenum disulfide Wet chemicals Wet etching |
Issue Date: | 2014 | Citation: | Amara, K.K, Chu, L, Kumar, R, Toh, M, Eda, G (2014). Wet chemical thinning of molybdenum disulfide down to its monolayer. APL Materials 2 (9) : 92509. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4893962 | Abstract: | We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS2) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO3) effectively etches thin MoS2 crystals from their edges via formation of MoO3. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds. © 2014 Author(s). | Source Title: | APL Materials | URI: | https://scholarbank.nus.edu.sg/handle/10635/176170 | ISSN: | 2166-532X | DOI: | 10.1063/1.4893962 |
Appears in Collections: | Elements Staff Publications |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
10_1063_1_4893962.pdf | 1.19 MB | Adobe PDF | OPEN | None | View/Download |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.