Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4893962
Title: Wet chemical thinning of molybdenum disulfide down to its monolayer
Authors: Amara, K.K
Chu, L 
Kumar, R 
Toh, M 
Eda, G 
Keywords: Layered semiconductors
Molybdenum oxide
Nitric acid
Sulfur compounds
Atomically thin crystals
Bilayer sheets
Chemical etching
Concentrated nitric acid
Electronic quality
Layer compounds
Molybdenum disulfide
Wet chemicals
Wet etching
Issue Date: 2014
Citation: Amara, K.K, Chu, L, Kumar, R, Toh, M, Eda, G (2014). Wet chemical thinning of molybdenum disulfide down to its monolayer. APL Materials 2 (9) : 92509. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4893962
Abstract: We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS2) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO3) effectively etches thin MoS2 crystals from their edges via formation of MoO3. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds. © 2014 Author(s).
Source Title: APL Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/176170
ISSN: 2166-532X
DOI: 10.1063/1.4893962
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