Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4893962
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dc.titleWet chemical thinning of molybdenum disulfide down to its monolayer
dc.contributor.authorAmara, K.K
dc.contributor.authorChu, L
dc.contributor.authorKumar, R
dc.contributor.authorToh, M
dc.contributor.authorEda, G
dc.date.accessioned2020-09-14T08:21:40Z
dc.date.available2020-09-14T08:21:40Z
dc.date.issued2014
dc.identifier.citationAmara, K.K, Chu, L, Kumar, R, Toh, M, Eda, G (2014). Wet chemical thinning of molybdenum disulfide down to its monolayer. APL Materials 2 (9) : 92509. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4893962
dc.identifier.issn2166-532X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/176170
dc.description.abstractWe report on the preparation of mono- and bi-layer molybdenum disulfide (MoS2) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO3) effectively etches thin MoS2 crystals from their edges via formation of MoO3. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds. © 2014 Author(s).
dc.sourceUnpaywall 20200831
dc.subjectLayered semiconductors
dc.subjectMolybdenum oxide
dc.subjectNitric acid
dc.subjectSulfur compounds
dc.subjectAtomically thin crystals
dc.subjectBilayer sheets
dc.subjectChemical etching
dc.subjectConcentrated nitric acid
dc.subjectElectronic quality
dc.subjectLayer compounds
dc.subjectMolybdenum disulfide
dc.subjectWet chemicals
dc.subjectWet etching
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentDEPT OF PHYSICS
dc.contributor.departmentPSYCHOLOGICAL MEDICINE
dc.description.doi10.1063/1.4893962
dc.description.sourcetitleAPL Materials
dc.description.volume2
dc.description.issue9
dc.description.page92509
dc.published.statePublished
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