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|Title:||Defects controlled hole doping and multivalley transport in SnSe single crystals||Authors:||Wang, Z
|Issue Date:||2018||Publisher:||Nature Publishing Group||Citation:||Wang, Z, Fan, C, Shen, Z, Hua, C, Hu, Q, Sheng, F, Lu, Y, Fang, H, Qiu, Z, Lu, J, Liu, Z, Liu, W, Huang, Y, Xu, Z.-A, Shen, D.W, Zheng, Y (2018). Defects controlled hole doping and multivalley transport in SnSe single crystals. Nature Communications 9 (1) : 47. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-017-02566-1||Abstract:||SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family. © 2017 The Author(s).||Source Title:||Nature Communications||URI:||https://scholarbank.nus.edu.sg/handle/10635/174350||ISSN:||2041-1723||DOI:||10.1038/s41467-017-02566-1|
|Appears in Collections:||Elements|
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