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Title: Defects controlled hole doping and multivalley transport in SnSe single crystals
Authors: Wang, Z
Fan, C
Shen, Z
Hua, C
Hu, Q
Sheng, F
Lu, Y
Fang, H
Qiu, Z 
Lu, J 
Liu, Z
Liu, W
Huang, Y
Xu, Z.-A
Shen, D.W
Zheng, Y
Keywords: selenium derivative
tin derivative
crystal structure
electronic equipment
energy dissipation
performance assessment
quantum mechanics
transport process
surface property
Issue Date: 2018
Publisher: Nature Publishing Group
Citation: Wang, Z, Fan, C, Shen, Z, Hua, C, Hu, Q, Sheng, F, Lu, Y, Fang, H, Qiu, Z, Lu, J, Liu, Z, Liu, W, Huang, Y, Xu, Z.-A, Shen, D.W, Zheng, Y (2018). Defects controlled hole doping and multivalley transport in SnSe single crystals. Nature Communications 9 (1) : 47. ScholarBank@NUS Repository.
Abstract: SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family. © 2017 The Author(s).
Source Title: Nature Communications
ISSN: 2041-1723
DOI: 10.1038/s41467-017-02566-1
Appears in Collections:Elements
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