Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep24920
Title: Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature
Authors: Liu, X
Ang, K.-W 
Yu, W
He, J
Feng, X 
Liu, Q
Jiang, H
Tang, D
Wen, J
Lu, Y
Liu, W
Cao, P
Han, S
Wu, J
Wang, X
Zhu, D
He, Z
Issue Date: 2016
Citation: Liu, X, Ang, K.-W, Yu, W, He, J, Feng, X, Liu, Q, Jiang, H, Tang, D, Wen, J, Lu, Y, Liu, W, Cao, P, Han, S, Wu, J, Wang, X, Zhu, D, He, Z (2016). Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature. Scientific Reports 6 : 24920. ScholarBank@NUS Repository. https://doi.org/10.1038/srep24920
Abstract: Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm2 /Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/174015
ISSN: 20452322
DOI: 10.1038/srep24920
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