Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2020.110458
Title: Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications
Authors: Yan, Xia 
Bin Suhaimi, Firdaus 
Xu, Menglei
Yang, Jie
Zhang, Xinyu
Wang, Qi
Jin, Hao
Shanmugam, Vinodh 
Duttagupta, Shubham 
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Passivated contact
Ex-situ doping
Diffusion
Ultra-thin poly-Si
ZnO:Al
POCL3 DIFFUSION
SILICON
EFFICIENCY
INTERFACE
THICKNESS
PRESSURE
FILMS
ZNOAL
Issue Date: 1-Jun-2020
Publisher: ELSEVIER
Citation: Yan, Xia, Bin Suhaimi, Firdaus, Xu, Menglei, Yang, Jie, Zhang, Xinyu, Wang, Qi, Jin, Hao, Shanmugam, Vinodh, Duttagupta, Shubham (2020-06-01). Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications. SOLAR ENERGY MATERIALS AND SOLAR CELLS 209. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2020.110458
Abstract: © 2020 Elsevier B.V. Rear side application of polycrystalline silicon (poly-Si) passivated contacts has demonstrated very high efficiencies for single-junction monocrystalline silicon (mono-Si) solar cells. To further improve the device performance, one possible approach is to apply the passivated contact concept to the front side of the solar cell as well. The front side application requires the use of ultra-thin poly-Si layer in order to suppress parasitic absorption. Suitable ex-situ diffusion process should be developed accordingly without damaging the passivation provided by the very thin interface oxide (iOx). In this work, we prepared symmetric lifetime samples of ultra-thin poly-Si (<30 nm) via low pressure chemical vapour deposition (LPCVD) method. Then we studied and optimised the ex-situ POCl3/BBr3 diffusion doping processes. An excellent passivation quality was demonstrated with a high implied open-circuit voltage (iVoc) of up to 730 mV (on symmetric n+ poly-Si lifetime samples) and 700 mV (on symmetric p+ poly-Si lifetime samples). For possible contact formation, we capped the poly-Si with sputter-deposited ZnO:Al, which shows good opto-electrical properties and firing stability at 650 °C.
Source Title: SOLAR ENERGY MATERIALS AND SOLAR CELLS
URI: https://scholarbank.nus.edu.sg/handle/10635/171637
ISSN: 09270248
18793398
DOI: 10.1016/j.solmat.2020.110458
Appears in Collections:Staff Publications
Elements

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Post-print.pdfAccepted version1.43 MBAdobe PDF

OPEN

Post-printView/Download

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.