Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2020.137886
Title: Optoelectrical properties of high-performance low-pressure chemical vapor deposited phosphorus-doped polysilicon layers for passivating contact solar cells
Authors: Pradeep Padhamnath 
Nitin Nampallia 
Naomi Nandakumar 
Jammaal Kitz Buatis 
Marvic-John Navala
Armin G. Aberlea 
Shubham Duttagupta 
Keywords: Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Materials Science, Coatings & Films
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
Passivating contacts
Poly-silicon
Passivation
Low pressure chemical vapor deposition
Ellipsometry
CRYSTALLINE SILICON
SURFACE PASSIVATION
OPTICAL-PROPERTIES
THIN-FILMS
INTRINSIC SILICON
EFFICIENCY
SI
BANDGAP
QUALITY
PERC
Issue Date: 1-Apr-2020
Publisher: ELSEVIER SCIENCE SA
Citation: Pradeep Padhamnath, Nitin Nampallia, Naomi Nandakumar, Jammaal Kitz Buatis, Marvic-John Navala, Armin G. Aberlea, Shubham Duttagupta (2020-04-01). Optoelectrical properties of high-performance low-pressure chemical vapor deposited phosphorus-doped polysilicon layers for passivating contact solar cells. THIN SOLID FILMS 699. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2020.137886
Abstract: © 2020 Elsevier B.V. We examine the optical behavior and electrical performance of ultra-thin interfacial oxide (iOx) and polysilicon (poly-Si) layers deposited using industrial tube-type low-pressure chemical vapor deposition (LPCVD). The intrinsic and doped poly-Si layers of different thicknesses are examined for their optical, electrical and passivation properties at different conditions. We present an outstanding surface passivation result with in-situ iOx and n+doped poly-Si layers of thickness ranging from 150 nm to 250 nm. Intrinsic poly-Si layers are deposited using LPCVD and doped at high temperature in a tube furnace. An excellent effective minority carrier lifetime of 17 ms, implied open-circuit voltage of 747 mV and an ultralow dark saturation current density of 1.2 fA/cm2 are obtained for a 150 nm thick n+ poly-Si after fast-firing at a peak temperature of 745 °C.
Source Title: THIN SOLID FILMS
URI: https://scholarbank.nus.edu.sg/handle/10635/170754
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2020.137886
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