Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168671
Title: A Black Phosphorus Carbide Infrared Phototransistor
Authors: Tan, Wee Chong 
Huang, Li 
Ng, Rui Jie
Wang, Lin 
Hasan, Dihan Md. Nuruddin 
Duffin, Thorin Jake 
Kumar, Karuppannan Senthil 
Nijhuis, Christian A. 
Lee, Chengkuo 
Ang, Kah-Wee 
Keywords: black phosphorus carbide
broadband detectors
infrared detectors
low noise
tunable responsivity
Issue Date: 21-Dec-2017
Publisher: Wiley-VCH Verlag
Citation: Tan, Wee Chong, Huang, Li, Ng, Rui Jie, Wang, Lin, Hasan, Dihan Md. Nuruddin, Duffin, Thorin Jake, Kumar, Karuppannan Senthil, Nijhuis, Christian A., Lee, Chengkuo, Ang, Kah-Wee (2017-12-21). A Black Phosphorus Carbide Infrared Phototransistor. ADVANCED MATERIALS 30 (6). ScholarBank@NUS Repository.
Abstract: Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W?1 and a shot noise equivalent power of 1.3 fW Hz?1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Source Title: ADVANCED MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/168671
ISSN: 9359648
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