Please use this identifier to cite or link to this item: https://doi.org/10.1088/1361-6463/aaf9f1
Title: Electronic transport properties of Weyl semimetals with strain-induced gauge fields
Authors: Xu, Zhonghui
SIU ZHUO BIN 
ANIRBAN KUNDU 
Yesilyurt, Can
Sun, Chi
Chen, Tong
MANSOOR BIN ABDUL JALIL 
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
Weyl semimetals
electronic transport properties
strain-induced gauge fields
TOPOLOGICAL INSULATOR
THIN-FILMS
GRAPHENE
MONOLAYER
Issue Date: 20-Mar-2019
Publisher: IOP PUBLISHING LTD
Citation: Xu, Zhonghui, SIU ZHUO BIN, ANIRBAN KUNDU, Yesilyurt, Can, Sun, Chi, Chen, Tong, MANSOOR BIN ABDUL JALIL (2019-03-20). Electronic transport properties of Weyl semimetals with strain-induced gauge fields. Journal of Physics D: Applied Physics 52 (12). ScholarBank@NUS Repository. https://doi.org/10.1088/1361-6463/aaf9f1
Abstract: © 2019 IOP Publishing Ltd. We investigate the electronic transport properties in Weyl semimetals (WSM) in the presence of unidirectional and torsional strains. We show that unidirectional and torsional strains induce an effective pseudomagnetic field which influences the tunneling transport through a barrier in a Weyl semimetal. The perfect transmission rings and arcs are shown to be highly sensitive to the application of unidirectional and torsional strains. Interestingly, the profile of the perfect transmission rings and arcs are different under tensile and compressive strains of the same magnitude. These results, together with the fact that the precise control of strain has been demonstrated in Weyl semimetals, open an exciting prospect towards all-Weyl semimetal electronics.
Source Title: Journal of Physics D: Applied Physics
URI: https://scholarbank.nus.edu.sg/handle/10635/156946
ISSN: 0022-3727
1361-6463
DOI: 10.1088/1361-6463/aaf9f1
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