Electronic transport properties of Weyl semimetals with strain-induced gauge fields

Abstract

© 2019 IOP Publishing Ltd. We investigate the electronic transport properties in Weyl semimetals (WSM) in the presence of unidirectional and torsional strains. We show that unidirectional and torsional strains induce an effective pseudomagnetic field which influences the tunneling transport through a barrier in a Weyl semimetal. The perfect transmission rings and arcs are shown to be highly sensitive to the application of unidirectional and torsional strains. Interestingly, the profile of the perfect transmission rings and arcs are different under tensile and compressive strains of the same magnitude. These results, together with the fact that the precise control of strain has been demonstrated in Weyl semimetals, open an exciting prospect towards all-Weyl semimetal electronics.