Please use this identifier to cite or link to this item:
https://doi.org/10.1109/SISPAD.2013.6650652
| Title: | A hybrid spin-charge mixed-mode simulation framework for evaluating STT-MRAM bit-cells utilizing multiferroic tunnel junctions | Authors: | Fong, X Roy, K |
Issue Date: | 31-Dec-2013 | Publisher: | IEEE | Citation: | Fong, X, Roy, K (2013-12-31). A hybrid spin-charge mixed-mode simulation framework for evaluating STT-MRAM bit-cells utilizing multiferroic tunnel junctions. 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : 372-375. ScholarBank@NUS Repository. https://doi.org/10.1109/SISPAD.2013.6650652 | Abstract: | Multiferroic tunnel junctions (MFTJs) consisting of ferromagnetic contacts sandwiching a ferroelectric tunnel barrier have been proposed as possible data storage elements. However, a simulation framework is needed for evaluating and analyzing the design and performance of memory cells based on MFTJs. In this paper, we propose a spin-charge mixed-mode simulation framework that captures the device physics of the MFTJ for SPICE circuit simulations. © 2013 IEEE. | Source Title: | 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) | URI: | https://scholarbank.nus.edu.sg/handle/10635/156199 | ISBN: | 9781467357364 | DOI: | 10.1109/SISPAD.2013.6650652 |
| Appears in Collections: | Staff Publications Elements |
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| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| Fong, Roy - 2013 - A hybrid spin-charge mixed-mode simulation framework for evaluating STT-MRAM bit-cells uti.pdf | Published version | 1.23 MB | Adobe PDF | OPEN | None | View/Download |
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