R-MRAM: A ROM-Embedded STT MRAM Cache

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2013.2279137

Title:	R-MRAM: A ROM-Embedded STT MRAM Cache
Authors:	Lee, Dongsoo Fong, Xuanyao Roy, Kaushik
Keywords:	Science & Technology Technology Engineering, Electrical & Electronic Engineering Cache design read-only memory (ROM) ROM-embedded STT MRAM spin-transfer torque magnetic random access memory (STT MRAM) MEMORY SRAM
Issue Date:	1-Oct-2013
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation:	Lee, Dongsoo, Fong, Xuanyao, Roy, Kaushik (2013-10-01). R-MRAM: A ROM-Embedded STT MRAM Cache. IEEE ELECTRON DEVICE LETTERS 34 (10) : 1256-1258. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2279137
Abstract:	We present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines. For normal RAM-mode operations, both bit-lines are driven and sensed to switch and read the MTJ state. When reading ROM data, only one read current source is turned on and the corresponding sense amplifier is used to monitor which bit-line is connected to the bit-cell (the MTJ state can be ignored). © 2013 IEEE.
Source Title:	IEEE ELECTRON DEVICE LETTERS
URI:	https://scholarbank.nus.edu.sg/handle/10635/156185
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2279137
Appears in Collections:	Staff Publications Elements

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