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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2013.2279137
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dc.titleR-MRAM: A ROM-Embedded STT MRAM Cache
dc.contributor.authorLee, Dongsoo
dc.contributor.authorFong, Xuanyao
dc.contributor.authorRoy, Kaushik
dc.date.accessioned2019-07-03T03:33:31Z
dc.date.available2019-07-03T03:33:31Z
dc.date.issued2013-10-01
dc.identifier.citationLee, Dongsoo, Fong, Xuanyao, Roy, Kaushik (2013-10-01). R-MRAM: A ROM-Embedded STT MRAM Cache. IEEE ELECTRON DEVICE LETTERS 34 (10) : 1256-1258. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2279137
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/156185
dc.description.abstractWe present a new spin-transfer torque magnetic random access memory (STT MRAM) bit-cell that is embedded with read-only memory (ROM) functionality. The proposed ROM-embedded STT MRAM (R-MRAM) bit-cells include one extra bit-line. ROM data is stored by selectively connecting the magnetic tunnel junction (MTJ) to one of the two bit-lines. For normal RAM-mode operations, both bit-lines are driven and sensed to switch and read the MTJ state. When reading ROM data, only one read current source is turned on and the corresponding sense amplifier is used to monitor which bit-line is connected to the bit-cell (the MTJ state can be ignored). © 2013 IEEE.
dc.language.isoen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectEngineering, Electrical & Electronic
dc.subjectEngineering
dc.subjectCache design
dc.subjectread-only memory (ROM)
dc.subjectROM-embedded STT MRAM
dc.subjectspin-transfer torque magnetic random access memory (STT MRAM)
dc.subjectMEMORY
dc.subjectSRAM
dc.typeArticle
dc.date.updated2019-07-03T03:11:12Z
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2013.2279137
dc.description.sourcetitleIEEE ELECTRON DEVICE LETTERS
dc.description.volume34
dc.description.issue10
dc.description.page1256-1258
dc.published.statePublished
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