Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2016.2520941
Title: | Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory | Authors: | Reza, Ahmed Kamal Fong, Xuanyao Al Azim, Zubair Roy, Kaushik |
Keywords: | Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Ferromagnet (FM) Hamiltonian quantum confinement spintronic memory topological insulator (TI) SPIN-ORBIT TORQUE FILMS ELECTRONS BI2SE3 BI2TE3 |
Issue Date: | 1-Mar-2016 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Citation: | Reza, Ahmed Kamal, Fong, Xuanyao, Al Azim, Zubair, Roy, Kaushik (2016-03-01). Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory. IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (3) : 1359-1367. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2016.2520941 | Abstract: | © 2016 IEEE. Topological insulators (TIs) are unique materials that have insulating bulk but conducting surface states. In this paper, we propose a simulation framework for TI/ferromagnet (FM) heterostructures that can capture the electronic band structure of a TI while calculating the transport properties. Our model differs from TI/FM models proposed in the literature in a way that it can account for the 3-D band structure of TIs, the effects of exchange coupling and external magnetic field on the band structure. The proposed approach uses 2-D surface Hamiltonian for TIs that includes the quantum confinement effect calculated from a 3-D band diagram. We use this Hamiltonian with self-consistent non-equilibrium Green's functions (NEGF) formalism to determine the charge and spin transport in TI/FM heterostructures. Our calculations agree well with experimental data and capture the unique features of a TI/FM heterostructure, such as the spin Hall angle, spin conductivity, and so on. Next, we incorporate the results into Landau-Lifshitz-Gilbert-Slonczewski formulation to simulate the magnetization dynamics of an FM layer sitting on top of a TI. Finally, we evaluate the performance of three different TI/FM memory structures and show that the TI-based memories can be energy efficient, if the shunting current through the FM layer is reduced. | Source Title: | IEEE TRANSACTIONS ON ELECTRON DEVICES | URI: | https://scholarbank.nus.edu.sg/handle/10635/156181 | ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2016.2520941 |
Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
Reza et al. - 2016 - Modeling and Evaluation of Topological InsulatorFerromagnet Heterostructure-Based Memory.pdf | Published version | 1.73 MB | Adobe PDF | CLOSED | Published |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.