Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2016.2520941
Title: Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory
Authors: Reza, Ahmed Kamal
Fong, Xuanyao 
Al Azim, Zubair
Roy, Kaushik
Keywords: Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Ferromagnet (FM)
Hamiltonian
quantum confinement
spintronic memory
topological insulator (TI)
SPIN-ORBIT TORQUE
FILMS
ELECTRONS
BI2SE3
BI2TE3
Issue Date: 1-Mar-2016
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Reza, Ahmed Kamal, Fong, Xuanyao, Al Azim, Zubair, Roy, Kaushik (2016-03-01). Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory. IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (3) : 1359-1367. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2016.2520941
Abstract: © 2016 IEEE. Topological insulators (TIs) are unique materials that have insulating bulk but conducting surface states. In this paper, we propose a simulation framework for TI/ferromagnet (FM) heterostructures that can capture the electronic band structure of a TI while calculating the transport properties. Our model differs from TI/FM models proposed in the literature in a way that it can account for the 3-D band structure of TIs, the effects of exchange coupling and external magnetic field on the band structure. The proposed approach uses 2-D surface Hamiltonian for TIs that includes the quantum confinement effect calculated from a 3-D band diagram. We use this Hamiltonian with self-consistent non-equilibrium Green's functions (NEGF) formalism to determine the charge and spin transport in TI/FM heterostructures. Our calculations agree well with experimental data and capture the unique features of a TI/FM heterostructure, such as the spin Hall angle, spin conductivity, and so on. Next, we incorporate the results into Landau-Lifshitz-Gilbert-Slonczewski formulation to simulate the magnetization dynamics of an FM layer sitting on top of a TI. Finally, we evaluate the performance of three different TI/FM memory structures and show that the TI-based memories can be energy efficient, if the shunting current through the FM layer is reduced.
Source Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
URI: https://scholarbank.nus.edu.sg/handle/10635/156181
ISSN: 0018-9383
1557-9646
DOI: 10.1109/TED.2016.2520941
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