Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2016.2520941
DC Field | Value | |
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dc.title | Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory | |
dc.contributor.author | Reza, Ahmed Kamal | |
dc.contributor.author | Fong, Xuanyao | |
dc.contributor.author | Al Azim, Zubair | |
dc.contributor.author | Roy, Kaushik | |
dc.date.accessioned | 2019-07-03T03:29:06Z | |
dc.date.available | 2019-07-03T03:29:06Z | |
dc.date.issued | 2016-03-01 | |
dc.identifier.citation | Reza, Ahmed Kamal, Fong, Xuanyao, Al Azim, Zubair, Roy, Kaushik (2016-03-01). Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based Memory. IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (3) : 1359-1367. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2016.2520941 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.issn | 1557-9646 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/156181 | |
dc.description.abstract | © 2016 IEEE. Topological insulators (TIs) are unique materials that have insulating bulk but conducting surface states. In this paper, we propose a simulation framework for TI/ferromagnet (FM) heterostructures that can capture the electronic band structure of a TI while calculating the transport properties. Our model differs from TI/FM models proposed in the literature in a way that it can account for the 3-D band structure of TIs, the effects of exchange coupling and external magnetic field on the band structure. The proposed approach uses 2-D surface Hamiltonian for TIs that includes the quantum confinement effect calculated from a 3-D band diagram. We use this Hamiltonian with self-consistent non-equilibrium Green's functions (NEGF) formalism to determine the charge and spin transport in TI/FM heterostructures. Our calculations agree well with experimental data and capture the unique features of a TI/FM heterostructure, such as the spin Hall angle, spin conductivity, and so on. Next, we incorporate the results into Landau-Lifshitz-Gilbert-Slonczewski formulation to simulate the magnetization dynamics of an FM layer sitting on top of a TI. Finally, we evaluate the performance of three different TI/FM memory structures and show that the TI-based memories can be energy efficient, if the shunting current through the FM layer is reduced. | |
dc.language.iso | en | |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
dc.source | Elements | |
dc.subject | Science & Technology | |
dc.subject | Technology | |
dc.subject | Physical Sciences | |
dc.subject | Engineering, Electrical & Electronic | |
dc.subject | Physics, Applied | |
dc.subject | Engineering | |
dc.subject | Physics | |
dc.subject | Ferromagnet (FM) | |
dc.subject | Hamiltonian | |
dc.subject | quantum confinement | |
dc.subject | spintronic memory | |
dc.subject | topological insulator (TI) | |
dc.subject | SPIN-ORBIT TORQUE | |
dc.subject | FILMS | |
dc.subject | ELECTRONS | |
dc.subject | BI2SE3 | |
dc.subject | BI2TE3 | |
dc.type | Article | |
dc.date.updated | 2019-07-03T03:08:27Z | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2016.2520941 | |
dc.description.sourcetitle | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.description.volume | 63 | |
dc.description.issue | 3 | |
dc.description.page | 1359-1367 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications Elements |
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Reza et al. - 2016 - Modeling and Evaluation of Topological InsulatorFerromagnet Heterostructure-Based Memory.pdf | Published version | 1.73 MB | Adobe PDF | CLOSED | Published |
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