Bit-Cell Level Optimization for Non-volatile Memories Using Magnetic Tunnel Junctions and Spin-Transfer Torque Switching

Abstract

Spin-transfer torque magnetic random access memories (STT-MRAM), using magnetic tunnel junctions (MTJ), is a resistive memory technology that has spurred significant research interest due to its potential for on-chip, high-density, high-speed, low-power, and non-volatile memory. However, due to conflicting read and write requirements, there is a need to develop optimization techniques for designing STT-MRAM bit-cells to minimize read and write failures. We propose an optimization technique that minimizes read and write failures by proper selection of bit-cell configuration and by proper access transistor sizing. A mixed-mode simulation framework was developed to evaluate the effectiveness of our optimization technique. Our simulation framework captures the transport physics in the MTJ using Non-Equilibrium Greens Function method and self-consistently solves the MTJ magnetization dynamics using Landau-Lifshitz-Gilbert equation augmented with the full Slonczewski spin-torque term. The electrical parameters of the MTJ are then encapsulated in a Verilog-A model and used in HSPICE to perform bit-cell level optimization. The optimization technique is applied to STT-MRAM bit-cells designed using 45nm bulk and 45nm silicon-on-insulator CMOS technologies. Finally, predictions are made for optimized STT-MRAM bit-cells designed in 16nm predictive technology. © 2011 IEEE.