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Title: Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine
Authors: Loh, K.P. 
Fan, W.Y. 
Lim, C.W.
Zhang, X. 
Chen, W. 
Xie, X.N. 
Xu, H. 
Wee, A.T.S. 
Keywords: Boron nitride
Chemical vapor deposition
Radio-frequency plasma
Issue Date: Mar-2003
Citation: Loh, K.P., Fan, W.Y., Lim, C.W., Zhang, X., Chen, W., Xie, X.N., Xu, H., Wee, A.T.S. (2003-03). Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine. Diamond and Related Materials 12 (3-7) : 1103-1107. ScholarBank@NUS Repository.
Abstract: The deposition of boron nitride nanomaterials and ultrathin films in high vacuum conditions (1×10-6-1×10-3 Torr) using molecular borazine as well as pre-dissociated borazine has been investigated with the motivation of studying the nucleation efficiency of BN under high vacuum conditions. Molecular borazine displays negligible sticking probability on Si(1 1 1) 7×7 at room temperature. Pre-adsorbing the borazine on silicon at 140 K and subsequent annealing is effective in forming ultrathin hexagonal films on the sample. It is possible to nucleate BN nanomaterials on nickel-sputtered silicon with high efficiency if the borazine is first discharged in a radio-frequency plasma to form reactive radicals. High quality crystalline h-BN thin films, as well as BN nanotubes can be formed on nickel via this approach. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Diamond and Related Materials
ISSN: 09259635
DOI: 10.1016/S0925-9635(03)00025-6
Appears in Collections:Staff Publications

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