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https://doi.org/10.1016/S0925-9635(03)00025-6
Title: | Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine | Authors: | Loh, K.P. Fan, W.Y. Lim, C.W. Zhang, X. Chen, W. Xie, X.N. Xu, H. Wee, A.T.S. |
Keywords: | Boron nitride Chemical vapor deposition Nanotubes Radio-frequency plasma |
Issue Date: | Mar-2003 | Citation: | Loh, K.P., Fan, W.Y., Lim, C.W., Zhang, X., Chen, W., Xie, X.N., Xu, H., Wee, A.T.S. (2003-03). Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine. Diamond and Related Materials 12 (3-7) : 1103-1107. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-9635(03)00025-6 | Abstract: | The deposition of boron nitride nanomaterials and ultrathin films in high vacuum conditions (1×10-6-1×10-3 Torr) using molecular borazine as well as pre-dissociated borazine has been investigated with the motivation of studying the nucleation efficiency of BN under high vacuum conditions. Molecular borazine displays negligible sticking probability on Si(1 1 1) 7×7 at room temperature. Pre-adsorbing the borazine on silicon at 140 K and subsequent annealing is effective in forming ultrathin hexagonal films on the sample. It is possible to nucleate BN nanomaterials on nickel-sputtered silicon with high efficiency if the borazine is first discharged in a radio-frequency plasma to form reactive radicals. High quality crystalline h-BN thin films, as well as BN nanotubes can be formed on nickel via this approach. © 2002 Elsevier Science B.V. All rights reserved. | Source Title: | Diamond and Related Materials | URI: | http://scholarbank.nus.edu.sg/handle/10635/115258 | ISSN: | 09259635 | DOI: | 10.1016/S0925-9635(03)00025-6 |
Appears in Collections: | Staff Publications |
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