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|Title:||Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine|
|Authors:||Loh, K.P. |
Chemical vapor deposition
|Citation:||Loh, K.P., Fan, W.Y., Lim, C.W., Zhang, X., Chen, W., Xie, X.N., Xu, H., Wee, A.T.S. (2003-03). Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine. Diamond and Related Materials 12 (3-7) : 1103-1107. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-9635(03)00025-6|
|Abstract:||The deposition of boron nitride nanomaterials and ultrathin films in high vacuum conditions (1×10-6-1×10-3 Torr) using molecular borazine as well as pre-dissociated borazine has been investigated with the motivation of studying the nucleation efficiency of BN under high vacuum conditions. Molecular borazine displays negligible sticking probability on Si(1 1 1) 7×7 at room temperature. Pre-adsorbing the borazine on silicon at 140 K and subsequent annealing is effective in forming ultrathin hexagonal films on the sample. It is possible to nucleate BN nanomaterials on nickel-sputtered silicon with high efficiency if the borazine is first discharged in a radio-frequency plasma to form reactive radicals. High quality crystalline h-BN thin films, as well as BN nanotubes can be formed on nickel via this approach. © 2002 Elsevier Science B.V. All rights reserved.|
|Source Title:||Diamond and Related Materials|
|Appears in Collections:||Staff Publications|
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