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Voon Yew Thean

rp31809

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Publications

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Policy:  Closed
Department:  DEAN'S OFFICE (ENGINEERING)
Date Issued:  2022
File Format:  Adobe PDF

Results 1-4 of 4 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121-Jun-2022A Simulation Approach to Analyze Bridge-Defects in a 6T-SRAM Bit CellJoydeep Ghosh ; Shang Yi Lim; Ferdaus Md. Meftahul; Senthilnath Jayavelu; Aaron Voon-Yew Thean 
26-Mar-2022Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)Umesh Chand ; Chen Chun-Kuei; Manohar Lal ; Sonu Hooda; Hasita Veluri; Zihang Fang; Shih-Hao Tsai; Aaron Voon-Yew Thean 
311-Oct-2022First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic SwitchChun-Kuei Chen; Zihang Fang; Sonu Hooda; Manohar Lal ; Umesh Chand ; Zefeng Xu; Jieming Pan ; Shih-Hao Tsai; Evgeny Zamburg ; Aaron Voon-Yew Thean 
412-Jun-2022Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning ComputingUmesh Chand ; Mohamed M Sabry Aly; Manohar Lal ; Chen Chun-Kuei; Sonu Hooda; Shih-Hao Tsai; Zihang Fang; Hasita Veluri; Aaron Voon-Yew Thean