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Wu Rongqin

rp09721

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Profile

Full Name
Wu Rongqin
(not current staff)
Variants
Wu, R.-Q.
Wu, R.Q.
Wu, R.
 
Main Affiliation
 
Faculty
 
Email
phywr@nus.edu.sg
 

Publications

Refined By:
Author:  Shen, L.

Results 1-9 of 9 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12009Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineeringLu, Y.H. ; Wu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; He, P.M.; Feng, Y.P. 
22009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
32009Ferromagnetism in semiconductors doped with non-magnetic elementsFeng, Y.P. ; Pan, H. ; Wu, R.Q. ; Shen, L. ; Ding, J. ; Yi, J.B. ; Wu, Y.H. 
42009Glass forming abilities of binary Cu100-x Zrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS studySha, Z.D.; Wu, R.Q. ; Lu, Y.H. ; Shen, L. ; Yang, M. ; Cai, Y.Q. ; Feng, Y.P. ; Li, Y. 
52008Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy studyYang, M. ; Peng, G.W. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Chen, Q.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
629-Aug-2008Mechanism of ferromagnetism in nitrogen-doped ZnO: First-principle calculationsShen, L. ; Wu, R.Q. ; Pan, H.; Peng, G.W. ; Yang, M. ; Sha, Z.D.; Feng, Y.P. 
730-Mar-2010Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion siteYang, K.; Wu, R. ; Shen, L. ; Feng, Y.P. ; Dai, Y.; Huang, B.
82007Possible efficient p-type doping of AlN using Be: An ab initio studyWu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Huang, Z.G.; Wu, Q.Y.
917-Sep-2007Room-Temperature Ferromagnetism in Carbon-Doped ZnOPan, H. ; Yi, J.B. ; Shen, L. ; Wu, R.Q. ; Yang, J.H.; Lin, J.Y. ; Feng, Y.P. ; Ding, J. ; Van, L.H. ; Yin, J.H.