1. ScholarBank@NUS

Ling Chung Ho

rp09495

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Type:  Article
Author:  Kwok, C.Y.

Results 1-12 of 12 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
2Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
3Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
4Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
51985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
61-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
7May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
8May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
9Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
10Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
11Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
12Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.