1. ScholarBank@NUS

KALON GOPINADHAN

rp07406

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Full Name
KALON GOPINADHAN
(not current staff)
Variants
Kalon, G.
Gopinadhan, K.
 
Main Affiliation
 
Faculty
 
Email
elekg@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2010 TO 2019]
Date Issued:  2011

Results 1-10 of 10 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12011Magnetic field control of hysteretic switching in Co/Al 2O 3 multilayers by carrier injectionKalitsov, A.; Sahadevan, A.M.; Jammalamadaka, S.N. ; Kalon, G. ; Bhatia, C.S. ; Xiong, G.; Yang, H. 
28-Aug-2011Magnetoresistance of two-dimensional and three-dimensional electron gas in LaAlO3/SrTiO3 heterostructures: Influence of magnetic ordering, interface scattering, and dimensionalityWang, X.; Lü, W.M.; Annadi, A.; Liu, Z.Q.; Gopinadhan, K. ; Dhar, S. ; Venkatesan, T. ; Ariando 
315-Oct-2011Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent studyMathew, S. ; Chan, T.K. ; Zhan, D.; Gopinadhan, K. ; Roy Barman, A.; Breese, M.B.H. ; Dhar, S. ; Shen, Z.X.; Venkatesan, T. ; Thong, J.T.L. 
424-Oct-2011Metal-insulator transition at a depleted LaAlO3/SrTiO 3 interface: Evidence for charge transfer induced by SrTiO 3 phase transitionsLü, W.M.; Wang, X.; Liu, Z.Q.; Dhar, S. ; Annadi, A.; Gopinadhan, K. ; Roy Barman, A.; Su, H.B.; Venkatesan, T. ; Ariando 
528-Sep-2011Metal-insulator transition in SrTiO3-x thin films induced by frozen-out carriersLiu, Z.Q.; Leusink, D.P.; Wang, X.; Lü, W.M.; Gopinadhan, K. ; Annadi, A.; Zhao, Y.L.; Huang, X.H.; Zeng, S.W.; Huang, Z.; Srivastava, A.; Dhar, S. ; Venkatesan, T. ; Ariando 
614-Feb-2011Multifunctional Ti1-x Tax O2: Ta doping or alloying?Barman, A.R.; Motapothula, M.; Annadi, A.; Gopinadhan, K. ; Zhao, Y.L.; Yong, Z.; Santoso, I. ; Ariando ; Breese, M. ; Rusydi, A. ; Dhar, S. ; Venkatesan, T. 
77-Oct-2011Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switchingLiu, Z.Q.; Leusink, D.P.; Lü, W.M.; Wang, X.; Yang, X.P.; Gopinadhan, K. ; Lin, Y.T.; Annadi, A.; Zhao, Y.L.; Barman, A.R.; Dhar, S. ; Feng, Y.P. ; Su, H.B.; Xiong, G.; Venkatesan, T. ; Ariando 
8Apr-2011The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiationMathew, S. ; Chan, T.K. ; Zhan, D.; Gopinadhan, K. ; Barman, A.-R.; Breese, M.B.H. ; Dhar, S. ; Shen, Z.X.; Venkatesan, T. ; Thong, J.T.L. 
922-Aug-2011The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer grapheneKalon, G. ; Jun Shin, Y.; Giang Truong, V.; Kalitsov, A.; Yang, H. 
106-Jun-2011Tunable metal-insulator transitions in bilayer graphene by thermal annealingKalon, G. ; Shin, Y.J.; Yang, H.