Oh Hoon-Jung

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Full Name

Oh Hoon-Jung

(not current staff)

Variants

Oh, H.-J.
Oh, H.J.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

eleoh@nus.edu.sg

Refined By:

Department: ELECTRICAL & COMPUTER ENGINEERING

Type: Article

Results 1-7 of 7 (Search time: 0.005 seconds).

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	Issue Date	Title	Author(s)
1	2008	Energy-band alignments of Hf O2 on p-GaAs substrates	Dalapati, G.K.; Oh, H.-J. ; Lee, S.J. ; Sridhara, A.; Wong, A.S.W.; Chi, D.
2	2007	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques	Oh, H.J. ; Choi, K.J.; Loh, W.Y.; Htoo, T. ; Chua, S.J. ; Cho, B.J.
3	2010	Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation	Oh, H.-J. ; Suleiman, S.A.B.; Lee, S.
4	2008	Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate	Lin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
5	Dec-2007	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance	Loh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J.
6	2008	Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy	Oh, H.J. ; Lin, J.Q.; Lee, S.J. ; Dalapati, G.K.; Sridhara, A.; Chi, D.Z.; Chua, S.J.; Lo, G.Q.; Kwong, D.L.
7	2010	Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor	Suleiman, S.A.; Oh, H.J. ; Du, A.; Ng, C.M.; Lee, S.J.