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He Yandong

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Full Name
He Yandong
Variants
He, Y.
He, Y.D.
 
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Faculty
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING
Type:  Article

Results 1-7 of 7 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
2Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
318-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
4May-2001Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxideGuan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z.
5May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.
6May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.
7Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.