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| | Issue Date | Title | Author(s) |
| 1 | 2000 | A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stress | Guan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. |
| 2 | Aug-2000 | A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's | Guan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z. |
| 3 | 1999 | Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method | Ng, K.H.; Jie, B.B.; He, Y.D. ; Chim, W.K. ; Li, M.F. ; Lo, K.F. |
| 4 | 18-Oct-1999 | Conduction mechanism under quasibreakdown of ultrathin gate oxide | He, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z. |
| 5 | May-2001 | Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide | Guan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z. |
| 6 | 2000 | Investigation of quasi-breakdown mechanism in ultra-thin gate oxides | Guan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z. |
| 7 | May-1999 | Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides | Guan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W. |
| 8 | May-1999 | Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides | Guan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W. |
| 9 | Nov-1999 | Role of hole fluence in gate oxide breakdown | Li, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z. |
| 10 | 2000 | Roles of primary hot hole and FN electron fluences in gate oxide breakdown | Li, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F. |
| 11 | 1999 | Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique | Guan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong |
