1. ScholarBank@NUS

Pan Yang

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Full Name
Pan Yang
Variants
Pan, Y.
 
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Faculty
 

Publications

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Department:  ELECTRICAL ENGINEERING

Results 1-11 of 11 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
11994A novel hot carrier reliability monitor for LDD p-MOSFETsPan, Y. ; Ng, K.K.; Kwong, V.
21998A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET'sLou, C.-L.; Chim, W.-K.; Chan, D.S.-H.; Pan, Y. 
31995Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETsPan, Y. ; Ng, K.K.
41997Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETsLou, C.L.; Song, J.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
51995Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gateLow, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
6Feb-1994Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET'sPan, Y. 
71995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
81995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
91993Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidationPan, Y. 
101993Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidationPan, Y. 
111992Modelling of band tails and their effects on minority carrier transport in heavily doped siliconPan, Y. ; Jain, S.C.; Kleffstra, M.; Balk, P.