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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  CHOR, ENG FONG

Results 1-11 of 11 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
120-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
22000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
31-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
4Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
526-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
616-May-2000Method and apparatus to image metallic patches embedded in a non-metal surfaceCHA, CHER LIANG RANDALL; GONG, HAO ; CHOR, ENG FONG ; CHAN, LAP
72009Ohmic contact properties and annealing effect for Au/Ni on p-Type P-Doped ZnOHu, G. ; Gong, H. ; Chor, E.F. 
82000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
92006Properties of p-type and n-type ZnO influenced by P concentrationHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.
102006Transparent indium zinc oxide ohmic contact to phosphor-doped n -type zinc oxideHu, G. ; Kumar, B. ; Gong, H. ; Chor, E.F. ; Wu, P.
112006ZnO homojunctions grown by cosputtering ZnO and Zn3P 2 targetsHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.