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Lee Sungjoo

rp01794

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Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Refined By:
Author:  Lo, G.Q.
Type:  Article

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12008Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanismZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Yu, M.B.; Lo, G.Q.; Kwong, D.L.; Cho, B.J. 
2May-2011Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technologyLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
3Feb-2008Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrierZang, H.; Lee, S.J. ; Loh, W.Y.; Wang, J.; Chua, K.T.; Yu, M.B.; Cho, B.J. ; Lo, G.Q.; Kwong, D.-L.
4Oct-2009Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor depositionWang, J. ; Zang, H.; Yu, M.B.; Xiong, Y.Z.; Lo, G.Q.; Kwong, D.L.; Lee, S.J. 
5Jan-2011Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible processPeng, J.W.; Singh, N.; Lo, G.Q.; Bosman, M.; Ng, C.M.; Lee, S.J. 
6Nov-2007Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budgetLoh, W.Y.; Wang, J. ; Ye, J.D.; Yang, R.; Nguyen, H.S.; Chua, K.T.; Song, J.F.; Loh, T.H.; Xiong, Y.Z.; Lee, S.J. ; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
72008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
82008Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gateLin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
9Sep-2008Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguideWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Tan, S.M.F.; Yu, M.B.; Lee, S.J. ; Lo, G.Q.; Kwong, D.L.
102007Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 bufferLoh, T.H.; Nguyen, H.S.; Murthy, R.; Yu, M.B.; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.L.; Wang, J. ; Lee, S.J. 
11Sep-2011Silicon nanowire forthermoelectric applications: Effects of contact resistanceLi, Y.; Buddharaju, K.; Singh, N.; Lo, G.Q.; Lee, S.J. 
122006Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrateBalakumar, S.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.L.; Fei, G.; Lee, S.J. 
132008Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopyOh, H.J. ; Lin, J.Q.; Lee, S.J. ; Dalapati, G.K.; Sridhara, A.; Chi, D.Z.; Chua, S.J.; Lo, G.Q.; Kwong, D.L.