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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.S.
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Liang, Y.C.

Results 1-20 of 39 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
12006A CMOS compatible smart power synchronous rectifierLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
2Oct-2002A simple technology for superjunction device fabrication: Polyflanked VDMOSFETGan, K.P.; Yang, X.; Liang, Y.C. ; Samudra, G.S. ; Yong, L.
32010A smart-power synchronous rectifier by CMOS processLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
4Sep-2003Accurate current sensor for lateral IGBT smart power integrationLiang, Y.C. ; Samudra, G.S. ; Lim, J.D.; Ong, P.H.
52013AlGaN/GaN power HEMT devices for future energy conversion applicationsLiang, Y.C. ; Samudra, G.S. ; Huang, H.; Huang, C.-F.; Chang, T.-F.
62008An enabling device technology for future superjunction power integrated circuitsChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
72006An FPGA based digital control design for high-frequency DC-DC convertersSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
82013Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devicesWang, Y.-H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.; Yuan, L.; Lo, G.-Q.
92014Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Ngo, C.L.L.
10Jul-2007Design of gradient oxide-bypassed superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
111998Design of integrated current sensor for lateral IGBT power devicesLiang, Y.C. ; Samudra, G.S. ; Hor, V.S.S.
122013Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Huang, C.-F.
132005Design of superjunction power MOSFET devices using the gradient oxide-bypassed structureChen, Y.; Liang, Y.C. ; Samudra, G.S. 
14May-2014Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTsHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.
152013Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTsLi, Y.; Liang, Y.C. ; Samudra, G.S. ; Huang, H.; Yeo, Y.-C. 
162013Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devicesSamudra, G.S. ; Liang, Y.C. ; Li, Y.; Yeo, Y.-C. 
17Dec-2013Modelling temperature dependence on AlGaN/GaN power HEMT device characteristicsWang, Y.-H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.; Yuan, L.; Lo, G.-Q.
182005Modelling, analysis and design of cascaded forward and interleaved converter for powering future microprocessorsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
192001MOS-controlled smart power synchronous rectifierLiang, Y.C. ; Lim, C.-Y.; Samudra, G.S. 
202004Optimal power converter topology for powering future microprocessor demandsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C.