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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

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Department:  MATERIALS SCIENCE

Results 21-40 of 106 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
2120-Jan-2002Crystallization and optoelectronic properties of indium-Zinc-Oxide thin films annealed in argon and vacuumChoy, S.F.; Gong, H. ; Zhu, F.
221995Determination of charge distribution volume in electron irradiated insulators by scanning electron microscopeChen, H.; Gong, H. ; Ong, C.K. 
2317-Feb-1997Discharging behaviour on insulator surfaces in vacuum: A scanning electron microscopy observationGong, H. ; Ong, C.K. 
2422-Feb-2005Dopant sources choice for formation of p-type ZnO: Phosphorus compound sourcesYu, Z.G.; Gong, H. ; Wu, P.
25Feb-2005Dynamic thermal degradation studies on amorphous carbon thin filmsLi, Y.Q.; Zhang, L.H.; Gong, H. 
2627-Oct-1997Dynamics aspects of the charging behaviour of polymers under focused electron beam irradiationOng, C.K. ; Song, Z.G.; Gong, H. 
271999Effect of Cu contamination on electrical characteristics for PMOS transistorsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Chan, L.; See, A.K.
28May-2000Effect of magnetic anisotropy distribution in longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
29Sep-2000Effect of orientation ratio on recording performance for longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
3015-Dec-2003Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputteringOng, C.H.; Gong, H. 
311997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
3220-Oct-2001Effects of nominal intermediate layer on microstructure and magnetic property in CoCrPtTa/CrTi thin filmsJin, D.; Wang, J.P.; Gong, H. 
332000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
341-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
35Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
36Feb-2005Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductorsLin, G.Q. ; Gong, H. ; Wu, P.
3726-Jun-2001Embedded polysilicon gate MOSFETCHAN, LAP; CHA, CHER LIANG; CHOR, ENG FONG ; HAO, GONG ; LEE, TECK KOON
381999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
39Sep-2002Evaluation of commercial electroless nickel chemicals for a low cost wafer bumping processLu, H.; Kang, C.L.; Wong, S.C.K.; Gong, H. 
401999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.