1. ScholarBank@NUS

Gong Hao

rp01924

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

Refined By:
Department:  MATERIALS SCIENCE
Department:  ELECTRICAL ENGINEERING
Author:  Cha, C.L.

Results 1-10 of 10 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
11998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
21997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
31997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
41997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
52000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
61999Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damageCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Dong, Z.; Chan, L.
71-Sep-1999Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitorsCha, C.L.; Chor, E.F. ; Jia, Y.M.; Bourdillon, A.J. ; Gong, H. ; Pan, J.S.; Zhang, A.Q.; Tang, S.K.; Boothroyd, C.B.
81998Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing techniqueCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
92000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
101998Threshold voltage instabilities of fresh flash memory devices caused by plasma chargingCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.