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Title: Combined structural and optical assessment of CVD grown 3C-SiC/Si
Authors: Feng, Z.C. 
Tin, C.C.
Yue, K.T.
Hu, R.
Williams, J.
Liew, S.C. 
Foo, Y.G.
Choo, S.K.L.
Ng, W.E.
Tang, S.H. 
Issue Date: 1994
Citation: Feng, Z.C.,Tin, C.C.,Yue, K.T.,Hu, R.,Williams, J.,Liew, S.C.,Foo, Y.G.,Choo, S.K.L.,Ng, W.E.,Tang, S.H. (1994). Combined structural and optical assessment of CVD grown 3C-SiC/Si. Materials Research Society Symposium - Proceedings 339 : 417-422. ScholarBank@NUS Repository.
Abstract: A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

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