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|Title:||Combined structural and optical assessment of CVD grown 3C-SiC/Si|
|Authors:||Feng, Z.C. |
|Citation:||Feng, Z.C.,Tin, C.C.,Yue, K.T.,Hu, R.,Williams, J.,Liew, S.C.,Foo, Y.G.,Choo, S.K.L.,Ng, W.E.,Tang, S.H. (1994). Combined structural and optical assessment of CVD grown 3C-SiC/Si. Materials Research Society Symposium - Proceedings 339 : 417-422. ScholarBank@NUS Repository.|
|Abstract:||A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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