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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98655
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dc.titleCombined structural and optical assessment of CVD grown 3C-SiC/Si
dc.contributor.authorFeng, Z.C.
dc.contributor.authorTin, C.C.
dc.contributor.authorYue, K.T.
dc.contributor.authorHu, R.
dc.contributor.authorWilliams, J.
dc.contributor.authorLiew, S.C.
dc.contributor.authorFoo, Y.G.
dc.contributor.authorChoo, S.K.L.
dc.contributor.authorNg, W.E.
dc.contributor.authorTang, S.H.
dc.date.accessioned2014-10-16T09:49:50Z
dc.date.available2014-10-16T09:49:50Z
dc.date.issued1994
dc.identifier.citationFeng, Z.C.,Tin, C.C.,Yue, K.T.,Hu, R.,Williams, J.,Liew, S.C.,Foo, Y.G.,Choo, S.K.L.,Ng, W.E.,Tang, S.H. (1994). Combined structural and optical assessment of CVD grown 3C-SiC/Si. Materials Research Society Symposium - Proceedings 339 : 417-422. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98655
dc.description.abstractA combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume339
dc.description.page417-422
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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