Please use this identifier to cite or link to this item:
|Title:||Tunable thermal conductivity of Si1-x Gex nanowires||Authors:||Chen, J.
|Issue Date:||2009||Citation:||Chen, J., Zhang, G., Li, B. (2009). Tunable thermal conductivity of Si1-x Gex nanowires. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212737||Abstract:||By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-x Gex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95 Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-x Gex NW might have promising application in thermoelectrics. © 2009 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/98462||ISSN:||00036951||DOI:||10.1063/1.3212737|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.