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https://doi.org/10.1063/1.3212737
Title: | Tunable thermal conductivity of Si1-x Gex nanowires | Authors: | Chen, J. Zhang, G. Li, B. |
Issue Date: | 2009 | Citation: | Chen, J., Zhang, G., Li, B. (2009). Tunable thermal conductivity of Si1-x Gex nanowires. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212737 | Abstract: | By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-x Gex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95 Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-x Gex NW might have promising application in thermoelectrics. © 2009 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/98462 | ISSN: | 00036951 | DOI: | 10.1063/1.3212737 |
Appears in Collections: | Staff Publications |
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