Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3212737
DC Field | Value | |
---|---|---|
dc.title | Tunable thermal conductivity of Si1-x Gex nanowires | |
dc.contributor.author | Chen, J. | |
dc.contributor.author | Zhang, G. | |
dc.contributor.author | Li, B. | |
dc.date.accessioned | 2014-10-16T09:47:22Z | |
dc.date.available | 2014-10-16T09:47:22Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Chen, J., Zhang, G., Li, B. (2009). Tunable thermal conductivity of Si1-x Gex nanowires. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212737 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98462 | |
dc.description.abstract | By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-x Gex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95 Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-x Gex NW might have promising application in thermoelectrics. © 2009 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3212737 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.3212737 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 95 | |
dc.description.issue | 7 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000269288300068 | |
Appears in Collections: | Staff Publications |
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