Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3212737
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dc.titleTunable thermal conductivity of Si1-x Gex nanowires
dc.contributor.authorChen, J.
dc.contributor.authorZhang, G.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:47:22Z
dc.date.available2014-10-16T09:47:22Z
dc.date.issued2009
dc.identifier.citationChen, J., Zhang, G., Li, B. (2009). Tunable thermal conductivity of Si1-x Gex nanowires. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212737
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98462
dc.description.abstractBy using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-x Gex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95 Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-x Gex NW might have promising application in thermoelectrics. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3212737
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3212737
dc.description.sourcetitleApplied Physics Letters
dc.description.volume95
dc.description.issue7
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000269288300068
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