Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3212737
Title: Tunable thermal conductivity of Si1-x Gex nanowires
Authors: Chen, J.
Zhang, G.
Li, B. 
Issue Date: 2009
Citation: Chen, J., Zhang, G., Li, B. (2009). Tunable thermal conductivity of Si1-x Gex nanowires. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212737
Abstract: By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-x Gex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95 Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-x Gex NW might have promising application in thermoelectrics. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98462
ISSN: 00036951
DOI: 10.1063/1.3212737
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