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|Title:||Oxygen-deficiency-activated anomalous transport in La2/3Sr1/3MnO3-δ thin films deposited by laser ablation||Authors:||Liu, J.-M.
|Issue Date:||1-Apr-2002||Citation:||Liu, J.-M., Zhang, Y.X., Liu, Z.G., Du, Y.W., Zhang, H.H., Yu, Z., Ong, C.K. (2002-04-01). Oxygen-deficiency-activated anomalous transport in La2/3Sr1/3MnO3-δ thin films deposited by laser ablation. Journal of Physics Condensed Matter 14 (12) : 3167-3173. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/14/12/307||Abstract:||The transport in oxygen-deficient polycrystalline La2/3Sr1/3MnO3-δ thin films deposited on Si(111) substrates using laser ablation is studied by measuring the resistivity and ac magnetic susceptibility over the range 2-300 K. The oxygen deficiency results in a serious shift of the insulating-metal (IM) transition toward the low-temperature side and anomalous transport behaviour over the low-temperature range. The ac susceptibility measurement reveals that, upon cooling, the sample exhibits a ferromagnetic transition, a weak anomaly at the IM transition and an antiferromagnetic (AFM) transition which may mainly arise from the charge ordering. Partial melting of the AFM state under a low magnetic field of 750 Oe is observed at 4.2 K.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/97484||ISSN:||09538984||DOI:||10.1088/0953-8984/14/12/307|
|Appears in Collections:||Staff Publications|
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