Please use this identifier to cite or link to this item: https://doi.org/12/307
Title: Oxygen-deficiency-activated anomalous transport in La2/3Sr1/3MnO3-δ thin films deposited by laser ablation
Authors: Liu, J.-M. 
Zhang, Y.X.
Liu, Z.G.
Du, Y.W.
Zhang, H.H.
Yu, Z.
Ong, C.K. 
Issue Date: 1-Apr-2002
Source: Liu, J.-M.,Zhang, Y.X.,Liu, Z.G.,Du, Y.W.,Zhang, H.H.,Yu, Z.,Ong, C.K. (2002-04-01). Oxygen-deficiency-activated anomalous transport in La2/3Sr1/3MnO3-δ thin films deposited by laser ablation. Journal of Physics Condensed Matter 14 (12) : 3167-3173. ScholarBank@NUS Repository. https://doi.org/12/307
Abstract: The transport in oxygen-deficient polycrystalline La2/3Sr1/3MnO3-δ thin films deposited on Si(111) substrates using laser ablation is studied by measuring the resistivity and ac magnetic susceptibility over the range 2-300 K. The oxygen deficiency results in a serious shift of the insulating-metal (IM) transition toward the low-temperature side and anomalous transport behaviour over the low-temperature range. The ac susceptibility measurement reveals that, upon cooling, the sample exhibits a ferromagnetic transition, a weak anomaly at the IM transition and an antiferromagnetic (AFM) transition which may mainly arise from the charge ordering. Partial melting of the AFM state under a low magnetic field of 750 Oe is observed at 4.2 K.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/97484
ISSN: 09538984
DOI: 12/307
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