High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1695438

Title:	High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate
Authors:	Wang, Y.C. Ding, J. Yi, J.B. Liu, B.H. Yu, T. Shen, Z.X.
Issue Date:	5-Apr-2004
Citation:	Wang, Y.C., Ding, J., Yi, J.B., Liu, B.H., Yu, T., Shen, Z.X. (2004-04-05). High-coercivity Co-ferrite thin films on (100)-SiO 2 substrate. Applied Physics Letters 84 (14) : 2596-2598. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1695438
Abstract:	The deposition of Co-ferrite films on SiO 2 single-crystal substrates was discussed. These films were prepared by the rf sputtering with a deposition rate of 0.2 Å per second. The preparation of a sputtering target with a stoichiometric composition of CoFe 2O 4 by sintering at 1300°C was also demonstrated. These films were annealed in an air atmosphere at a temperature between 500 and 1200°C between 5 and 120 min.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/96800
ISSN:	00036951
DOI:	10.1063/1.1695438
Appears in Collections:	Staff Publications

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